Characterization of high-Q spiral inductors on thick insulator-on-silicon
نویسندگان
چکیده
Abstract This paper reports on the fabrication and characterization of high quality factor (Q) copper (Cu) inductors with thick insulator on standard silicon (Si) substrate (ρ = 10–20 cm). The thickness and the area of the insulating layer are optimized for high Q by fabricating inductors on very thick (∼50 μm) embedded silicon dioxide (SiO2) islands and 4–20 μm thick PECVD SiO2 coated standard Si substrate. The effect of the dielectric permittivity is verified by comparing the performances of identical inductors fabricated on 20 μm thick SiO2 and 20 μm thick low-k polymer coated standard Si substrate. Measurement results show saturation behavior for the inductor Q versus the area and the thickness of the insulating layer. A 0.9 nH inductor fabricated on a 50 μm thick embedded oxide island (OI) exhibits a high peak Q of 53 at 2 GHz. The Q of an identical inductor on 20 μm thick PECVD SiO2 is 45 at 2 GHz.
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